transistor(pnp) features z high breakdown voltage. (bv ceo = -120v) z complements the 2sc4102 maximum ratings (t a =25 unless otherwise noted) electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =-50 a,i e =0 -120 v collector-emitter breakdown voltage v (br)ceo i c =-1ma,i b =0 -120 v emitter-base breakdown voltage v (br)ebo i e =-50 a,i c =0 -5 v collector cut-off current i cbo v cb =-100v,i e =0 -0.5 a emitter cut-off current i ebo v eb =-4v,i c =0 -0.5 a dc current gain h fe v ce =-6v,i c =-2ma 180 560 collector-emitter saturation voltage v ce(sat) i c =-10ma,i b =-1ma -0.5 v transition frequency f t v ce =-12v,i c =-2ma,f=30mhz 140 mhz collector output capacitance c ob v cb =-12v,i e =0,f=1mhz 3.2 pf classification of h fe rank r s range 180-390 270-560 marking rr rs symbol parameter value units v cbo collector- base voltage -120 v v ceo collector-emitter voltage -120 v v ebo emitter-base voltage -5 v i c collector current -continuous -50 ma p c collector dissipation 100 mw t j junction temperature 150 t stg storage temperature -55-150 sot-323 1. base 2. emitter 3. collector 2sa1 57 9 date:2011/05 1 date:2011/05 www.htsemi.com semiconductor jinyu free datasheet http:///
typical characteristics 2sa1 5 7 9 2 date:2011/05 www.htsemi.com semiconductor jinyu free datasheet http:///
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